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high performance isolated collector silicon bipolar transistor technical data features ? ideal for high performance, medium power, and low noise applications ? typical performance at 1.8 ghz medium power application p 1db of 19 dbm, noise figure of 1.7 db, and associated gain of 15 db at 3 v and 50 ma low noise application noise figure of 1.2 db, associated gain of 13 db, and p 1db of 11 dbm at 2 v and 10 ma ? miniature 4-lead sc-70 (sot-343) plastic package ? transition frequency f t = 25 ghz hbfp-0450 description hewlett packards hbfp-0450 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead sc-70 (sot-343) surface mount plastic package. this product is based on a 25 ghz transition frequency fabrication process, which enables the products to be used for high performance, medium power, low noise applications up to 6 ghz. applications ? driver amplifier for cellular and pcs base stations ? driver amplifier and medium power amplifier for cellular and pcs handsets ? high dynamic range lna for ism, wireless data, and wll applications ? oscillator, mixer, and lo buffer applications 4-lead sc-70 (sot-343) surface mount plastic package pin configuration collector emitter base 80 emitter note: package marking provides orientation and identification.
2 hbfp-0450 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 15.0 v ceo collector-emitter voltage v 4.5 i c collector current ma 100 p t power dissipation [2] mw 450 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance: q jc = 180 c/w notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. p t due to maximum ratings. 3. thermal resistance measured using liquid crystal measurement method. electrical specifications, t c = 25 c symbol parameters and test conditions units min. typ. max. dc characteristics bv ceo collector-emitter breakdown voltage i c = 1 ma, open base v 4.5 i cbo collector-cutoff current v cb = 5 v, i e = 0 na 500 i ebo emitter-base cutoff current v eb = 1.5 v, i c = 0 m a 100 h fe dc current gain v ce = 2 v, i c = 20 ma 50 80 150 rf characteristics p -1db power output at 1 db i c = 50 ma, v ce = 3 v, f = 1.8 ghz db 19 compression point i c = 50 ma, v ce = 2 v, f = 1.8 ghz 17 ip 3 3 rd order intercept pt at output i c = 50 ma, v ce = 3 v, f = 1.8 ghz dbm 29 g -1db gain at 1 db compression point i c = 50 ma, v ce = 3 v, f = 1.8 ghz dbm 16 i c = 50 ma, v ce = 2 v, f = 1.8 ghz 15.5 f min minimum noise figure i c = 50 ma, v ce = 3 v, f = 1.8 ghz db 1.7 i c = 50 ma, v ce = 2 v, f = 1.8 ghz 1.8 g a associated gain i c = 50 ma, v ce = 3 v, f = 1.8 ghz db 15 i c = 50 ma, v ce = 2 v, f = 1.8 ghz 14.5 nf minimum noise figure i c = 10 ma, v ce = 2 v, f = 1.8 ghz db 1.2 i c = 20 ma, v ce = 2 v, f = 1.8 ghz 1.3 1.7 g a associated gain i c = 10 ma, v ce = 2 v, f = 1.8 ghz db 13 i c = 20 ma, v ce = 2 v, f = 1.8 ghz 13.0 14 p -1db power output at 1 db i c = 10 ma, v ce = 2 v, f = 1.8 ghz dbm 11 compression point i c = 20 ma, v ce = 2 v, f = 1.8 ghz 14
3 hbfp-0450 typical performance figure 1. minimum noise figure vs. frequency and collector current at 2 v. 0 1.0 3.0 3.5 4.5 4.0 0 2 48 6 10 fmin (db) frequency (ghz) 0.5 1.5 2.0 2.5 10 ma 20 ma 50 ma 70 ma 0 4 6 10 20 14 18 0 2 48 6 10 associated gain (db) frequency (ghz) figure 2. associated gain vs. frequency and collector current at 2 v. 16 12 8 2 10 ma 20 ma 50 ma 70 ma figure 3. minimum noise figure vs. frequency and voltage at 20 ma. 0 3.5 0 2 48 6 10 fmin (db) frequency (ghz) 1 v 2 v 3 v 0.5 1.0 3.0 1.5 2.0 2.5 0 4 6 10 20 14 18 0 2 48 6 10 associated gain (db) frequency (ghz) figure 4. associated gain vs. frequency and voltage at 20 ma. 16 12 8 2 1 v 2 v 3 v figure 5. minimum noise figure vs. collector current at 2 v. 0 1 5 4 2 0 20 40 60 80 120 140 100 fmin (db) collector current (ma) 3 0.9 ghz 1.8 ghz 2.5 ghz 4 ghz 6 ghz figure 6. associated gain vs. collector current at 2 v. 0 4 20 16 8 0 20 40 60 80 120 140 100 associated gain (db) collector current (ma) 12 2 6 10 14 18 0.9 ghz 1.8 ghz 2.5 ghz 4 ghz 6 ghz
4 hbfp-0450 typical performance , continued figure 7. p 1db vs. collector current and frequency. 0 5 20 10 020 40 60 80 100 p 1db (dbm) collector current (ma) 15 0.9 1.8 3 4 5 6 figure 9. p out (dbm), gain (db), and i c (ma) vs. p in (dbm) at 2 v, 50 ma. 900 mhz: g s : mag: 0.68, ang: 121 ; g l : mag: 0.38, ang: 171 1800 mhz: g s : mag: 0.44, ang: 158 ; g l : mag: 0.28, ang: 159 0 5 25 20 10 p out (dbm) & gain (db) i c (ma) p in (dbm) 15 0 15 75 60 30 45 p out @ 900 i c @ 900 gain @ 1800 gain @ 900 p out @ 1800 i c @ 1800 -15 -11 -7 -3 1 9 13 5 figure 10. p out (dbm), gain (db), and i c (ma) vs. p in (dbm) at 3 v, 80 ma. g s : mag: 0.72, ang: 169 g l : mag: 0.26, ang: 168 0 10 50 40 20 -15 -11 -7 -3 1 9 13 5 p out (dbm) & gain (db) p in (dbm) 30 p out @ 1800 gain @ 1800 i c @ 1800 i c (ma) 0 20 100 80 40 60 0 5 25 0 1 23 p 1db (dbm) voltage (v) figure 8. p 1db vs. voltage at 1.8 ghz. 20 15 10 20 ma 50 ma 80 ma figure 12. power gain vs. voltage and frequency at 50 ma. -5 0 30 15 10 01 2 345 power gain (db) voltage (v) 20 25 5 1 ghz 2 ghz 3 ghz 4 ghz 5 ghz 6 ghz figure 11. power gain vs. collector current and frequency at 2 v. 0 5 30 15 10 030 60 90 120 150 power gain (db) collector current (ma) 20 25 1 ghz 2 ghz 3 ghz 4 ghz 5 ghz 6 ghz
5 hbfp-0450 typical scattering parameters, v ce = 2 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.74 -39 26.20 20.409 157 -31.37 0.027 71 0.93 -26 0.5 0.73 -128 20.68 10.813 107 -22.85 0.072 33 0.53 -90 0.9 0.71 -161 16.16 6.425 87 -21.83 0.081 24 0.37 -122 1.0 0.71 -166 15.29 5.816 83 -21.72 0.082 23 0.35 -129 1.5 0.72 175 11.85 3.913 68 -20.92 0.090 20 0.31 -154 1.8 0.73 167 10.26 3.260 60 -20.45 0.095 19 0.30 -165 2.0 0.73 162 9.37 2.941 55 -20.18 0.098 19 0.30 -172 2.5 0.74 150 7.46 2.360 44 -19.33 0.108 17 0.30 175 3.0 0.74 140 5.94 1.981 34 -18.56 0.118 15 0.30 164 4.0 0.75 120 3.67 1.526 14 -17.02 0.141 8 0.31 146 5.0 0.76 102 1.97 1.255 -5 -15.65 0.165 -2 0.33 126 6.0 0.79 83 0.47 1.055 -25 -14.70 0.184 -15 0.37 106 7.0 0.81 65 -1.00 0.891 -43 -14.07 0.198 -28 0.43 88 8.0 0.84 49 -2.33 0.765 -60 -13.64 0.208 -40 0.48 72 9.0 0.85 35 -3.47 0.671 -75 -13.19 0.219 -53 0.52 57 10.0 0.87 20 -4.45 0.599 -91 -12.84 0.228 -67 0.55 40 hbfp-0450 noise parameters: v ce = 2 v, i c = 10 ma freq. f min g opt r n /50 g a ghz db mag ang db 0.5 0.80 0.36 124 0.24 22.7 0.9 0.91 0.38 140 0.16 18.4 1.5 1.08 0.41 160 0.08 14.7 1.8 1.15 0.46 177 0.05 13.5 2.0 1.21 0.48 -178 0.05 12.6 2.5 1.36 0.53 -162 0.06 10.9 3.0 1.51 0.59 -150 0.09 9.6 4.0 1.8 0.65 -127 0.25 7.6 5.0 2.09 0.70 -106 0.55 6.2 6.0 2.39 0.73 -85 1.09 5.0 note: r n represents normalized noise resistance. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. figure 13. hbfp-0450 power gain at 2 v, 10 ma. 0.1 100 10 1 1.00e+08 1.00e+09 1.00e+10 frequency ipg msg/mag
6 hbfp-0450 typical scattering parameters, v ce = 2 v, i c = 20 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.64 -53 29.07 28.415 153 -32.04 0.025 67 0.89 -35 0.5 0.70 -144 21.90 12.449 101 -24.88 0.057 33 0.49 -110 0.9 0.70 -170 17.10 7.159 84 -23.61 0.066 30 0.38 -143 1.0 0.70 -174 16.20 6.455 80 -23.35 0.068 30 0.37 -149 1.5 0.71 169 12.69 4.308 67 -21.94 0.080 30 0.35 -172 1.8 0.72 162 11.09 3.584 60 -21.11 0.088 29 0.35 -179 2.0 0.73 157 10.18 3.23 55 -20.63 0.093 29 0.35 173 2.5 0.73 147 8.26 2.589 45 -19.41 0.107 26 0.36 161 3.0 0.74 137 6.73 2.171 35 -18.34 0.121 23 0.37 152 4.0 0.74 118 4.46 1.672 16 -16.48 0.150 13 0.38 134 5.0 0.76 100 2.75 1.373 -3 -15.09 0.176 1 0.39 115 6.0 0.78 82 1.23 1.152 -22 -14.11 0.197 -13 0.43 96 7.0 0.81 64 -0.23 0.974 -40 -13.60 0.209 -27 0.48 79 8.0 0.83 48 -1.54 0.838 -56 -13.23 0.218 -40 0.52 65 9.0 0.85 34 -2.64 0.738 -72 -12.88 0.227 -53 0.55 49 10.0 0.87 19 -3.58 0.662 -88 -12.58 0.235 -67 0.58 33 hbfp-0450 noise parameters: v ce = 2 v, i c = 20 ma freq. f min g opt r n /50 g a ghz db mag ang db 0.5 0.97 0.33 152 0.19 24.1 0.9 1.07 0.37 165 0.13 19.6 1.0 1.10 0.38 168 0.12 18.8 1.5 1.22 0.45 -178 0.08 15.6 1.8 1.3 0.49 -167 0.06 14.3 2.0 1.34 0.50 -164 0.06 13.5 2.5 1.47 0.55 -152 0.08 11.7 3.0 1.6 0.59 -142 0.12 10.2 4.0 1.87 0.64 -121 0.29 8.1 5.0 2.12 0.68 -102 0.57 6.6 6.0 2.37 0.73 -83 1.04 5.5 note: r n represents normalized noise resistance. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. figure 14. hbfp-0450 power gain at 2 v, 20 ma. 100 10 1 1.00e+08 1.00e+09 1.00e+10 frequency ipg msg/mag
7 hbfp-0450 typical scattering parameters, v ce = 2 v, i c = 50 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.54 -74 31.05 35.689 147 -33.15 0.022 63 0.84 -45 0.5 0.69 -156 22.41 13.198 97 -26.56 0.047 36 0.48 -128 0.9 0.70 -178 17.44 7.450 81 -24.88 0.057 37 0.42 -159 1.0 0.71 179 16.53 6.707 78 -24.44 0.060 38 0.41 -164 1.5 0.72 165 12.98 4.456 66 -22.38 0.076 38 0.41 178 1.8 0.73 158 11.38 3.705 59 -21.41 0.085 37 0.41 169 2.0 0.73 154 10.47 3.337 55 -20.72 0.092 36 0.42 164 2.5 0.74 144 8.55 2.675 45 -19.25 0.109 32 0.42 154 3.0 0.74 134 7.02 2.245 36 -18.06 0.125 28 0.43 145 4.0 0.75 116 4.76 1.730 17 -16.08 0.157 16 0.44 127 5.0 0.76 99 3.05 1.421 -1 -14.66 0.185 2 0.45 109 6.0 0.78 81 1.52 1.191 -20 -13.72 0.206 -12 0.49 90 7.0 0.81 63 0.06 1.007 -38 -13.23 0.218 -27 0.53 74 8.0 0.83 48 -1.24 0.867 -54 -12.92 0.226 -40 0.57 60 9.0 0.85 33 -2.30 0.767 -69 -12.62 0.234 -54 0.60 45 10.0 0.86 19 -3.24 0.689 -85 -12.40 0.240 -68 0.61 29 hbfp-0450 noise parameters: v ce = 2 v, i c = 50 ma freq. f min g opt r n /50 g a ghz db mag ang db 0.5 1.46 0.43 -176 0.18 24.7 0.9 1.56 0.48 -170 0.14 20.1 1.0 1.58 0.50 -167 0.13 19.3 1.5 1.70 0.54 -160 0.10 16.1 1.8 1.78 0.58 -153 0.09 14.7 2.0 1.81 0.59 -151 0.11 13.9 2.5 1.94 0.62 -141 0.16 12.0 3.0 2.07 0.64 -133 0.23 10.6 4.0 2.31 0.68 -114 0.48 8.4 5.0 2.57 0.71 -96 0.85 6.8 6.0 2.82 0.74 -78 1.46 5.6 note: r n represents normalized noise resistance. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. figure 15. hbfp-0450 power gain at 2 v, 50 ma. 100 10 1 1.00e+08 1.00e+09 1.00e+10 frequency ipg msg/mag
8 hbfp-0450 typical scattering parameters, v ce = 3 v, i c = 50 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.53 -66 31.15 36.115 150 -33.98 0.020 64 0.85 -39 0.5 0.66 -152 23.12 14.327 99 -26.74 0.046 39 0.47 -117 0.9 0.68 -176 18.27 8.197 82 -24.88 0.057 39 0.39 -147 1.0 0.68 -180 17.36 7.376 79 -24.44 0.060 39 0.38 -153 1.5 0.70 165 13.77 4.879 67 -22.38 0.076 40 0.36 -174 1.8 0.70 158 12.15 4.050 60 -21.31 0.086 39 0.36 176 2.0 0.71 153 11.23 3.645 56 -20.72 0.092 38 0.36 171 2.5 0.71 143 9.30 2.919 46 -19.25 0.109 34 0.37 160 3.0 0.72 134 7.77 2.446 37 -17.99 0.126 30 0.38 150 4.0 0.71 116 5.50 1.883 19 -15.92 0.160 18 0.39 133 5.0 0.72 97 3.80 1.548 0 -14.42 0.190 4 0.40 114 6.0 0.75 79 2.28 1.300 -19 -13.47 0.212 -10 0.43 96 7.0 0.78 61 0.84 1.101 -36 -12.92 0.226 -25 0.48 79 8.0 0.80 46 -0.43 0.952 -52 -12.51 0.237 -38 0.52 65 9.0 0.83 31 -1.47 0.844 -68 -12.15 0.247 -52 0.54 51 10.0 0.84 17 -2.43 0.756 -83 -11.90 0.254 -66 0.57 35 hbfp-0450 noise parameters: v ce = 3 v, i c = 50 ma freq. f min g opt r n /50 g a ghz db mag ang db 0.5 1.32 0.43 180 0.13 25.8 0.9 1.44 0.48 -172 0.10 20.9 1.8 1.70 0.61 -151 0.09 15.3 2.0 1.76 0.60 -149 0.11 14.4 2.5 1.90 0.61 -139 0.17 12.5 3.0 2.03 0.64 -130 0.24 11.0 4.0 2.33 0.66 -112 0.50 8.6 5.0 2.61 0.69 -93 0.88 7.0 6.0 2.89 0.73 -75 1.49 5.8 note: r n represents normalized noise resistance. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. figure 16. hbfp-0450 power gain at 3 v, 50 ma. 100 10 1 1.00e+08 1.00e+09 1.00e+10 frequency ipg msg/mag
9 hbfp-0450 typical scattering parameters, v ce = 3 v, i c = 80 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.44 -72 31.13 36.031 150 -34.42 0.019 65 0.84 -39 0.5 0.63 -155 23.14 14.355 100 -27.33 0.043 42 0.46 -116 0.9 0.65 -174 18.52 8.429 84 -24.88 0.057 43 0.40 -144 1.0 0.65 -177 17.68 7.659 81 -24.29 0.061 44 0.39 -150 1.5 0.68 171 14.06 5.045 69 -22.16 0.078 44 0.36 -178 1.8 0.68 166 12.34 4.139 64 -21.11 0.088 44 0.36 175 2.0 0.71 152 11.19 3.628 56 -20.63 0.093 39 0.38 169 2.5 0.72 142 9.26 2.905 46 -19.17 0.11 35 0.39 158 3.0 0.72 133 7.73 2.436 37 -17.92 0.127 31 0.39 149 4.0 0.72 115 5.47 1.877 19 -15.81 0.162 19 0.40 131 5.0 0.72 97 3.77 1.543 0 -14.33 0.192 5 0.42 113 6.0 0.75 78 2.25 1.295 -18 -13.39 0.214 -10 0.44 95 7.0 0.78 61 0.80 1.097 -36 -12.84 0.228 -25 0.49 78 8.0 0.80 45 -0.45 0.949 -52 -12.43 0.239 -38 0.53 64 9.0 0.83 31 -1.48 0.843 -67 -12.08 0.249 -52 0.55 50 10.0 0.84 16 -2.45 0.754 -83 -11.87 0.255 -66 0.58 34 hbfp-0450 noise parameters: v ce = 3 v, i c = 80 ma freq. f min g opt r n /50 g a ghz db mag ang db 0.5 1.61 0.58 -177 0.08 25.3 0.9 1.73 0.63 -172 0.07 20.7 1.0 1.76 0.66 -168 0.07 19.9 1.5 1.91 0.70 -162 0.10 16.7 1.8 1.99 0.72 -158 0.09 15.5 2.0 2.06 0.73 -154 0.14 14.4 2.5 2.20 0.74 -147 0.24 12.5 3.0 2.36 0.74 -136 0.34 11.1 4.0 2.65 0.76 -117 0.66 9.1 5.0 2.90 0.77 -94 1.12 7.6 6.0 3.20 0.78 -70 1.89 6.4 note: r n represents normalized noise resistance. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. s and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point. figure 17. hbfp-0450 power gain at 3 v, 80 ma. 100 10 1 1.00e+08 1.00e+09 1.00e+10 frequency ipg msg/mag
10 hbfp-0450 die model and spice parameters rcx r rbx r re r rse r r=1 oh r=1.565e-1 oh r=2.099499e-1 oh r = .4 oh temp= model=dbe region= area= area=10 region= model=bjtmodel area= region= model=dcs temp= area= region= model = dbc temp= c =6.227e-14 f c = .24e -12 f xx cmp1 npnbjtsubst ccox c ceox c cmp2 diode cmp16 diode cmp3 diode b e xx xx c is=ie-24 bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= cjo=4.6442578e-13 tt= eg= vj=0.6 m=0.42 n= fc=0.8 cmp12 diodemodelform # diode model # rs=1.58036628e2 model = dcs is=i.40507e-16 bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= rs= tt= eg= vj=0.729 m=0.44 n=1 fc=0.8 cmp10 diodemodelform # diode model # cjo=2.393e-13 model = dbc bv= ibv= imax= xti= tnom=21 kf= af= isr= nr= ikf= nbv= ibvl= nbvl= ffe= cjo=2.59257503e-13 rs= tt= eg= vj=0.8971 m=2.292e-1 n=1.0029 fc=0.8 cmp11 diodemodelform # diode model # model = dbe npn=yes pnp= vtf=0.8 itf=2.21805486e0 ptf=22 xtb=0.7 approxob=yes forward bf=1e6 ikf=1.4737e-1 ne=1.006 vaf=4.4e1 nf=1 tf=5.3706e-12 xtf=20 reverse br=1 ikr=1.1e-1 isc= nc=2 var=30.37 nr=1.005 tr=4e-9 cjc=1.87e-14 ise=5e-19 is=3.01e-17 cje=9.48e-14 noise af= kb= ab= fb= kf= diode and junction eg=1.17 imax= xti=3 tnom=21 substrate iss= ns= parasitics rb=9.30144818e-1 irb=3.029562e-5 rbm=.01 re= rc= vjc=.6775 mjc=0.3319 fc=0.8 vje=0.9907 mje=0.5063 cjs= vjs= mjs= bjt bitmodelform # bjt model # model = bjtmodel xcjc=4.39790997e-1 is=ie-24 rbal r r=1.4 oh this model can be used as a design tool. it has been tested on mds for various specifications. however, for more precise and accurate design, please refer to the measured data in this data sheet. for future improvements hewlett-packard reserves the right to change these models without prior notice.
11 sot343 package equivalent circuit l = 0.2 nh l = 0.7 nh l = 0.2 nh l = 0.15 nh l = .22 nh llb l lt1 l lli l ll2 l c2t1 c c1t1 c cceb c c = 0.80 pf aground in out aground base collector emitter c = 0.05 pf c = 0.04 pf c = 0.04 pf aground aground lle l l = 0.1 nh lt2 l c2t2 c c = 0.1 pf aground c1t2 c l = 0.5 nh l = 0.2 nh ll3 l lt3 l l = 0.7 nh cmp44 l c1t3 c ccec c c2t3 c c = 0.1 pf c = 0.01 pf aground aground c = 0.144 pf c = 0.05 pf ccbc c
12 package dimensions outline 43, sot-343 (sc-70 4 lead) part number ordering information part number devices per reel container hbfp-0450-tr1 3000 7" reel hbfp-0450-tr2 10,000 13" reel HBFP-0450-BLK 100 antistatic bag e d a a1 b typ e e1 1.30 (0.051) bsc 1.15 (.045) bsc q h c typ l dimensions are in millimeters (inches) dimensions min. 0.80 (0.031) 0 (0) 0.25 (0.010) 0.10 (0.004) 1.90 (0.075) 2.00 (0.079) 0.55 (0.022) 0.450 typ (0.018) 1.15 (0.045) 0.10 (0.004) 0 max. 1.00 (0.039) 0.10 (0.004) 0.35 (0.014) 0.20 (0.008) 2.10 (0.083) 2.20 (0.087) 0.65 (0.025) 1.35 (0.053) 0.35 (0.014) 10 symbol a a1 b c d e e h e1 l q 1.15 (.045) ref 1.30 (.051) ref 1.30 (.051) 2.60 (.102) 0.55 (.021) typ 0.85 (.033)
13 device orientation tape dimensions for outline 4t user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view p p 0 p 2 f w d 1 d e a 0 8 max. t 1 (carrier tape thickness) 5 max. b 0 k 0 08 08 08 08 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.259 0.013 0.315 0.012 0.010 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance
www.hp.com/go/rf for technical assistance or the location of your nearest hewlett-packard sales office, distributor or representative call: americas/canada: 1-800-235-0312 or 408-654-8675 far east/australasia: call your local hp sales office. japan: (81 3) 3335-8152 europe: call your local hp sales office. data subject to change. copyright ? 1998 hewlett-packard co. 5968-2070e (12/98)

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